1 transistor 2sd661, 2sd661a silicon npn epitaxial planer type for low-frequency and low-noise amplification n features l low noise voltage nv. l high foward current transfer ratio h fe . l m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:scC71 3:emitter m type mold package 6.9 0.1 0.55 0.1 0.45 0.05 1.0 0.1 1.0 2.5 0.1 1.0 1.5 1.5 r0.9 r0.9 r0.7 0.4 0.85 3.5 0.1 2.0 0.2 2.4 0.2 1.25 0.05 4.1 0.2 4.5 0.1 2.5 2.5 1 2 3 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 35 55 35 55 7 200 100 400 150 C55 ~ +150 unit v v v ma ma mw ?c ?c 2sd661 2sd661a 2sd661 2sd661a n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency noise voltage symbol i cbo i ceo v cbo v ceo v ebo h fe * v ce(sat) f t nv conditions v cb = 20v, i e = 0 v ce = 20v, i b = 0 i c = 10 m a, i e = 0 i c = 2ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 2ma i c = 100ma, i b = 10ma v cb = 10v, i e = C2ma, f = 200mhz v ce = 10v, i c = 1ma, g v = 80db r g = 100k w , function = flat min 35 55 35 55 7 210 typ 200 max 0.1 1 650 1 150 unit m a m a v v v v mhz mv * h fe rank classification rank r s t h fe 210 ~ 340 290 ~ 460 360 ~ 650 2sd661 2sd661a 2sd661 2sd661a
2 transistor 2sd661, 2sd661a p c ta i c v ce i c i b i b v be i c v be v ce(sat) i c h fe i c f t i e c ob v cb 0 160 40 120 80 140 20 100 60 0 500 400 300 200 100 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 012 10 8 26 4 0 160 120 40 100 140 80 20 60 ta=25?c i b =350 m a 300 m a 250 m a 200 m a 150 m a 100 m a 50 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 00.5 0.4 0.1 0.3 0.2 0 160 120 40 100 140 80 20 60 v ce =5v ta=25?c base current i b ( ma ) collector current i c ( ma ) 01.0 0.8 0.2 0.6 0.4 0 800 600 200 500 700 400 100 300 v ce =5v ta=25?c base to emitter voltage v be ( v ) base current i b ( m a ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce =5v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 25?c ?5?c ta=75?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 0.1 1 10 100 0.3 3 30 0 720 600 480 360 240 120 v ce =5v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ?0.1 ? ?0 ?00 ?0.3 ? ?0 0 500 400 300 200 100 v cb =5v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 0.1 1 10 100 0.3 3 30 0 20 16 12 8 4 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
3 transistor 2sd661, 2sd661a nv v ce nv v ce nv i c nv i c nv r g nv r g 1 3 10 30 100 0 160 120 40 100 140 80 20 60 i c =1ma g v =80db function=flat 4.7k w r g =100k w 22k w collector to emitter voltage v ce ( v ) noise voltage nv ( mv ) 1 3 10 30 100 0 300 240 120 180 60 i c =1ma g v =80db function=riaa 4.7k w r g =100k w 22k w collector to emitter voltage v ce ( v ) noise voltage nv ( mv ) 0.01 0.03 0.1 0.3 1 0 160 120 40 100 140 80 20 60 v ce =10v g v =80db function=flat 4.7k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv ) 0.01 0.03 0.1 0.3 1 0 300 240 120 180 60 v ce =10v g v =80db function=riaa 4.7k w r g =100k w 22k w collector current i c ( ma ) noise voltage nv ( mv ) 1 3 10 30 100 0 160 120 40 100 140 80 20 60 v ce =10v g v =80db function=flat 0.1ma i c =1ma 0.5ma signal source resistance r g ( k w ) noise voltage nv ( mv ) 1 3 10 30 100 0 300 240 120 180 60 v ce =10v g v =80db function=riaa 0.1ma i c =1ma 0.5ma signal source resistance r g ( k w ) noise voltage nv ( mv )
|
